Review Article: Molecular Beam Epitaxy of Lattice-Matched InAlAs and InGaAs Layers on InP (111)A, (111)B, and (110)
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چکیده
منابع مشابه
Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy
A self-organized In0.53Ga0.47As/(In0.53Ga0.47As)2(In0.44Al0.56As)2 quantum wire (QWR) laser was grown on a (775)B InP substrate by molecular beam epitaxy (MBE). Well lattice-matched and flat cladding layers were grown at a rather high temperature (595 C). Lateral confinement potential was induced by a nano-meter scale interface corrugation of InGaAs/(InGaAs)2(InAlAs)2 with an amplitude of 2 nm ...
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تاریخ انتشار 2017